Researchers of King Abdullah University of Science and Technology (KAUST) have been working on improve efficiency of red Micro LEDs and they recently announced the achievement of manufacturing stable red Micro LED based on InGaN. (Image: KAUST) A major challenge facing the development of Micro LEDs is to integrate red, green and blue light into a single LED chip. Current RGB LEDs are made by combining two kinds of materials with InGaP red LEDs and InGaN blue and green LEDs. "Creating RGB displays requires the mass transfer...

A research team at the King Abdullah University of Science and Technology (KAUST) announced their achievement in manufacturing InGaN red LEDS with a peak wavelength of 665nm as well as improved light output power and external quantum efficacy. Their achievement is believed to support more efficient process of full color Micro LED display development. (Image: KAUST) One of the challenges of Micro LED display is producing red LEDs with GaN, which is considered almost impossible, according to Kazuhiro Ohkawa, leader of the research group. Red colo...

Micro LED technology moved steps forwards since 2019 with worldwide companies showcasing their Micro LED products at big trade shows. LEDinside has noted in “2019 Micro LED Next Generation Display Key Technology Report” that featured with high brightness, high contrast, high response time and power saving, Micro LED technology would suppress other display technology such as LCD and OLED. A wider range of applications including watches, mobile phones, automotive displays, AR/VR devices, monitors, TVs and large displays can also develop toward...

In recognition of his groundbreaking work in LED (light-emitting diode) technology, UC Santa Barbara materials professor Shuji Nakamura has been chosen as a 2015 Global Energy Prize Laureate. The prestigious Russian award “honors outstanding achievements in energy research and technology from around the world that are helping address the world’s various and pressing energy challenges.”

In a collaboration between LayTec and Prof. Dirk Rueter´s group at University of Applied Sciences Ruhr West a breakthrough has been achieved regarding the real-time monitoring of InGaN/GaN quantum well emission wavelength during MOCVD growth. It is well known that room temperature wafer based photoluminescence (PL) measurements provide an excellent forecast of the emission wavelength and emission intensity of the later LED devices. Recently, a prototype in-situ PL system worked simulatnneously with a LayTec Pyro 400 in a commercial multi-wafer MOCVD reactor. The related paper [2] was rocketed immediately to the status of  “most downloaded Journal of Crystal Growth articles”  from Science Direct. This  work is supported under grant KF3242801NT3 by BMWi (German Federal Government).

Hi-Q-LED”, a publicly funded project coordinated by Osram Opto Semiconductors, has developed LEDs with an extremely high efficacy and a reduced drop in efficacy

Japan’s Fukuda Crystal Laboratory has successfully developed a 50 mm (about 2-inch) ScAlMgO4 (SCAM) crystal, according to a Chinese-language Nikkei Technology report.