2012-05-04

NGK Insulators Ltd Develops New GaN Wafer for Double LED Luminous Efficiency

Recently, NGK Insulators Ltd has made a breakthrough on LED Luminous Efficiency with a gallium nitride (GaN) wafer. The company claims that the new GaN wafer can realize twice as high a luminous efficiency as existing LED light sources (200lm/W). According to the company, it realized a transparent and colorless wafer with a low defect density by using its own liquid phase growth method for a single-crystal growth process. Generally, existing LED devices have an internal quantum efficiency of 30-40% (with a current of 200mA). However, under the help of a resea...
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2011-12-13

Japanese NGK Shows GaN Substrates for HB-LEDs

Japanese based company NGK Insulators has released new wafer products for electronic device applications in ultra high brightness (UHB) LEDs. It has showcased at SEMICON Japan 2011 held between December 7 through 9 at Makuhari Messe in Chiba for the first time. The company targets wafer products as a major research and development theme in the electronics field. In the R&D line-up, there are bonded wafers that achieve new functions previously unavailable with a single material wafer, and GaN single crystal wafers that have low defect density and colourle...
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Tokushima, Japan - 6 March 2024: Nichia, the world's largest LED manufacturer and inventor of the high-brightness blue and white LED, has started mass production of the new UV-B (308nm) and UV-A (330nm) LEDs in its popular 434 Series packa... READ MORE

New XLamp® S Line LEDs enhance growth, last longer, lower energy costs Horticulture and other forms of agricultural lighting require application-tuned ratios of spectral content, high efficacy and long lifetimes. Whether you are interested... READ MORE