2012-05-31

LightFair International 2012 Report IV: Bridgelux and Toshiba to Mass-produce 8-inch GaN-on-Si LEDs

At LightFair International 2012, which commenced on May 8-11 in Las Vegas, LEDinside conducted an interview with Mr. Jason Posselt, Vice President of Marketing at Bridgelux, shedding light on the latest development of LED lighting and GaN-on-Si technology. Mass Production of 8-inch Gan-on-Si LEDs Posselt said that Bridgelux has successfully developed a 135lm/W Gan-on-Si LED. The Gan-on-Si technology helps reduce the cost of turning a large-size wafer into a LED. Also, silicon substrate’s cost is lower than that of sapphire substrate...
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New XLamp® S Line LEDs enhance growth, last longer, lower energy costs Horticulture and other forms of agricultural lighting require application-tuned ratios of spectral content, high efficacy and long lifetimes. Whether you are interest... READ MORE