2014-06-10

Sumitomo to Expand GaN-on-SiC Device Production with AIXTRON System

Sumitomo Electric Device Innovations, Inc. (SEDI), Japan, has ordered an AIXTRON CRIUS MOCVD system to be delivered with 4-inch wafer configuration in order to boost production of gallium nitride on silicon carbide devices for RF data transfer applications. The purchase was made in the first quarter of 2014 for delivery at SEDI’s Electron Devices Division in Yokohama in the third quarter.
Continue reading
XLamp® CTW LEDs bring lighting flexibility to life New XLamp® CTW Series – Two-Channel CCT-Tunable White COB LEDs Cree LED’s XLamp CTW Series redefines CCT-tunable COB LEDs with unmatched lumen density, efficiency and de... READ MORE
ams OSRAM, a global leader in innovative light and sensor solutions today held a roundtable forum spotlighting new opportunities with high precision illumination characterization. The event brought together experts from industry, academia, and... READ MORE