2014-06-10

Sumitomo to Expand GaN-on-SiC Device Production with AIXTRON System

Sumitomo Electric Device Innovations, Inc. (SEDI), Japan, has ordered an AIXTRON CRIUS MOCVD system to be delivered with 4-inch wafer configuration in order to boost production of gallium nitride on silicon carbide devices for RF data transfer applications. The purchase was made in the first quarter of 2014 for delivery at SEDI’s Electron Devices Division in Yokohama in the third quarter.
Continue reading
Making the Invisible Visible: IR:6 Sets New Standards in Infrared Technology Infrared light, though invisible to the human eye, is crucial for many modern technologies. IR:6 introduces a true innovation that enhances performance, efficiency, ... READ MORE

In January 2025, certain automotive LEDs manufactured by Malaysia-based LED manufacturer Dominant Opto Technologies Sdn. Bhd. ("Dominant") were recalled from a distributor pursuant to a patent infringement lawsuit filed by Nichia Cor... READ MORE