| |   Management | Member Center | Contact Us RSS facebook google+ twitter linkedin mobile web     CN TW EN

Home > GaN-on-SiC
2017-05-16

EpiGaN to Showcase its 200mm GaN-on-Si Epi Wafers for 650V Power Switching and RF Power Applications

EpiGaN n.v., a worldwide provider of III-nitride epitaxial material solutions for advanced semiconductor manufacturing, will showcase the latest enhancements of its Gallium Nitride on Silicon epi-wafer family that meets industrial specifications for HEMT (High Electron Mobility Transistor) devices at 650V at PCIM Europe 2017 in Nuremberg, Germany, (May 16- 18, 2017) as ell as at CSMantech in Indian Wells, California, USA (May 22-14, 2017). 
Continue reading →
2014-06-10

Sumitomo to Expand GaN-on-SiC Device Production with AIXTRON System

Sumitomo Electric Device Innovations, Inc. (SEDI), Japan, has ordered an AIXTRON CRIUS MOCVD system to be delivered with 4-inch wafer configuration in order to boost production of gallium nitride on silicon carbide devices for RF data transfer applications. The purchase was made in the first quarter of 2014 for delivery at SEDI’s Electron Devices Division in Yokohama in the third quarter.
Continue reading →
Weekly Top7
Monthly Top7
FEATURED PRODUCTS
[News] Optimized IR Lasers from ams OSRAM — Ideal for Particularly Demanding 3D Sensor Applications

The number of modern applications using 3D sensor technologies is steadily increasing, including ambient sensing for industrial robots, various face recognition applications, object detection, and machine vision. Vertical Cavity Surface Emitti... READ MORE

[News] Nichia's High-power 280nm UV LED Has Been Chosen by Shikoku Kakoki Co., Ltd. for Their Food and Beverage Filling Machines

Nichia, the world's largest LED manufacturer and inventor of the high-brightness blue and white LED, is pleased to announce that a UV-C LED disinfection device manufactured by Mutoh Industries Ltd., equipped with Nichia's high-power 28... READ MORE

PRESS RELEASE