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2014-06-25

Taiwanese Research Institute Develops Aluminum Nitride Substrate for LEDs

A team of researchers at Chung-Shan Institute of Science and Technology (CSIST) have developed aluminum nitride (AlN) substrate for high power LED. The project is backed by Taiwan Ministry of Economic Affair’s Technology Innovation Center, according to Taiwanese media source Micro-Electronics on June 20, 2014.

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[News] Illuminating Change: LEDVANCE’s Third Sustainability Report Highlights Progress in Innovation and Digital Transformation

This year's report plays a key role in aligning with the upcoming standards of the European Union and is built on a significantly broader data foundation than in previous years. For the first time, the report includes all LEDVANCE entities... READ MORE

[News] Nichia's Cube Direct Mountable Chip Wins LightFair Innovation Awards

Nichia, the world's largest LED manufacturer and inventor of the high-brightness blue and white LEDs, is pleased to announce that Cube Direct Mountable Chip received the LightFair Innovation Awards in the LED Chips & Modules category. ... READ MORE

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