2011-09-27
LG Electronics Woomyeon R&D Campus (LG Electronics Advanced Research Institute),recently has ordered one AIX G5 HT MOCVD system in an 8x6-inch wafer configuration to develop GaN-on-Silicon power electronics. In addition, the contract also includes a cooperation agreement in order to optimise LGE´s GaN/Si processes and to accelerate its proprietary device-oriented production. The reactor was ordered in the first quarter of 2011 and following delivery in the third quarter of 2011 will be installed and commissioned by a local Aixtron service s...
Continue reading →
2011-09-16
Taiwan’s LED manufacturer EpiLEDs Technologies Inc., recently has ordered AIXTRON CRIUS II-L MOCVD system in a 69x2-inch wafer configuration,for the volume production of ultra-high brightness (UHB) Gallium Nitride (GaN) based blue LEDs. The system was ordered in the second quarter of 2011 and following delivery in the third quarter of 2011, will be installed and commissioned by a local AIXTRON service team in EpiLEDs’ state-of-the-art facility in Tainan, Taiwan. Steve Ku, President of EpiLEDs Technologies Inc., ...
Continue reading →
2011-09-16
Source inform that Aixtron, has slashed its sales guidance for 2011 and reduced its order backlog by €100 million, based on talks with its Asian customers revealed increasing macro-economic concerns. Previously, Aixtron’s target was €800 million-€900 million.However, it now expects to post sales of between €600 million and €650 million. With the average cost of a piece of MOCVD kit around €2-2.5 million, the new guidance suggests that Aixtron has cut its shipment expectations for 2011 by as many as one hundreds units. It may has a...
Continue reading →
2011-09-07
Aixtron SE has a new order for four CRIUS II MOCVD systems in a 55x2-inch configuration from China´s Jiangsu Canyang Optoelectronics, a joint venture with Taiwan-based LED chipmaker Formosa Epitaxy (Forepi).
The company is seeking a smooth process transfer up from their existing CRIUS MOCVD reactors to Aixtron´s new generation platform.
According to Forepi President Fen-Ren Chien, they are embarking on a whole new era of high volume blue LED production at Jiangsu Canyang. To minimise risk and interruptions they have once aga...
Continue reading →
2011-07-07
Currently, with the introduction of the new CRIUS II-L, which Aixtron considered as the world's largest capacity MOCVD reactor,the company sets a new benchmark for MOCVD reactor capacity, throughput and LED production cost. the new Aixtron CRIUS II-L is based on the already market proven CRIUS II platform which was introduced in 2010,and it’s now available with a 16x4 inch or 69x2 inch capacity. As with previous generations, the CRIUS II-L reactor is based on the Close Coupled Showerhead (CCS) concept, which as a key...
Continue reading →
2011-07-05
Reportedly, Aixtron has signed the “Aixtron - SINANO MOCVD Training Centre” agreement with Suzhou Institute of Nano-tech & Nano-bionics, Chinese Academy of Sciences (SINANO). Under the agreement, Aixtron will provide one CRIUS II MOCVD system and one AIXG5HT MOCVD system at SINANO’s facility to train its customers and potential customers’ engineers on the usage of MOVCD systems. In addition, SINANO's process and maintenance engineers will also be trained by Aixtron for the system op...
Continue reading →
2011-07-04
Currently, Aixtron is building a wholly owned Chinese subsidiary Aixtron China Ltd.in Shanghai for its further expansion in China. This move targets to support Aixtron’s growing base of Chinese customers and makes it easier to grow by opening other facilities throughout China in the near future. Christian Geng, Aixtron Vice President Greater China,ponited out that ,"This is the next logical step in terms of our increasing commitment to support China’s aggressive plans to become one of the world’s leading countries in LED production. ...
Continue reading →
2011-06-22
AquaLite in China has placed a new order from Aixtron for 55x2-inch CRIUS II reactor which will be dedicated to the growth of materials for high brightness LEDs and high Voltage (HV) LED production. The system was ordered in the first quarter of 2011 and the local Aixtron support team will install and commission the new reactor in the second quarter of 2011 at the dedicated AquaLite power chip LED facility within its mainland China production plant. it’s said that with state of the art epitaxial crystal growth and chip process technology, AquaLite&rs...
Continue reading →
2011-06-09
AIXTRON is selected for GaN-based blue LED by Taiyuan University of Technology, China. The order is for one AIXTRON Close Coupled Showerhead (CCS) 3x2-inch configuration deposition system. The system will be delivered in the second quarter of 2011. One of AIXTRON´s local support teams in China will commission the new reactor in a new state of the art facility at the University. According to Dr. Jian Liang, Professor of Taiyuan University of Technology’s Material College State Laboratory, this will be their first AIXTR...
Continue reading →
2011-05-20
Recently, AIXTRON has received a large multiple order of its G5 HT MOCVD Planetary Reactor for the industry standard LED production platform from Samsung LED.
The new systems will be installed within this year at Samsung’s latest state-of-the-art production facility and be used for volume production of HB blue and white GaN-based LEDs for television back-light units and LED lamps for solid-state lighting applications.
Samsung LED has been using AIX 2800G4 HT GaN MOCVD systems for several years. Following successful commission...
Continue reading →
2011-05-10
Overview Organized by LEDinside, LEDforum China of International Market Trend and Lighting Applications will be grandly open in Shenzhen on May 27, 2011. LEDforum 2011 will focus on the market trend of LED lighting application, and the agenda speakers include top leaders from Aixtron, Epilight, Macroblock, Osram, Philips Lumileds, Seoul Semiconductor, Veeco and other industry giants. These industry heavy weights will share with us their unique industry perspectives and accurate market forecasts, including market dynamics, business strateg...
Continue reading →
2011-04-22
Aixtron’s latest Close Coupled Showerhead (CCS) MOCVD platform system, the CRIUS II, has supported the Chi Mei Group for mass production, outperforming expectations as to process stability, uniformity, and throughput. Chi Mei has installed the 55x2-inch wafer configuration CCS CRIUS II and became the first customer in Taiwan to receive this new system. The CRIUS II can easily be tuned to the optimum performance and can further be converted from 2- to 4-, 6-inch or larger wafer size production. Compared to the CRIUS, the CRIUS ...
Continue reading →
2011-04-20
Taiwan Epistar has ordered Aixtron G5 HT reactors in a 14x4-inch configuration for high brightness LEDs. Aixtron G5 HT reactor is a further endorsement of G5´s very rapid time-to-production and excellent system-to-system reproducibility. Ming-Jiunn Jou, President of Epistar, was please with the new reactors and thought that it will form the backbone of their planned capacity expansion for their high brightness LED production program. It’s said that the systems are delivered in the first and second quarter of 2011. Aixtron´s local support tea...
Continue reading →
2011-03-31
AIXTRON SE announced today a new order for a Close Coupled Showerhead® (CCS) MOCVD system from PARC, a Xerox company, in Palo Alto, CA, USA. The system will include the full set of advanced features such as the in-situ multichannel pyrometer ARGUS, high temperature growth, and gap adjustment for optimum (Al)GaN conditions in a wide pressure range. Placed in the fourth quarter of 2010, the order is for a CCS system capable of operation in the 3x2-inch configuration. After delivery in the second quarter of 2011, the system will be used for t...
Continue reading →
2011-03-17
AIXTRON SE today announced an order for MOCVD reactors from new customer Beiji Haotian Technology Co., Ltd. The order for a total of five systems comprises two AIX 2800G4 HT deposition systems in the 42x2-inch configuration and three AIX G5 HT deposition systems in the 56x2-inch configuration. The Jiangsu, China-based company placed the order during the second quarter of 2010 and following delivery between the first and second quarter of 2011, the systems will be used for production of power chip LEDs. The local AIXTRON support team will commi...
Continue reading →
2011-03-10
The Centre de Recherche Public (CRP) - Gabriel Lippmann, the leading research institute in Nanotechnologies in Luxembourg, and AIXTRON SE announced the start of a cooperation agreement. The main goal of the new project is the mutual development of advanced polymer materials focusing on establishing a wide range of processes that contribute to the fabrication of advanced organic/inorganic materials.
The technological platform in this 3-year cooperative project is AIXTRON´s Polymer Vapor Phase Deposition technology (PVPD™) for the depos...
Continue reading →
2011-03-08
<!--[if gte mso 9]>
Normal
0
7.8 磅
0
2
false
false
false
EN-US
ZH-CN
X-NONE
MicrosoftInternetExplorer4
<![endif]-->
</xml>
Continue reading →
2011-03-04
AIXTRON SE worldwide leading provider of deposition equipment to the semiconductor industry, has a number of stock option programs in place that grant the members of the Executive Board and employees the right to purchase AIXTRON shares under certain conditions. Under the terms of the stock option plan 2007, stock options can currently be exercised. New shares resulting from exercised options are not entitled for dividend for fiscal year 2010 and will therefore be traded on the Frankfurt Stock Exchange under the separate ISIN DE000A1H30A0 until and includin...
Continue reading →
2011-03-01
Successful market penetration of latest generation systems
Early demand for LED lighting production equipment continues
R&D capacity increases
AIXTRON SE (ISIN DE000A0WMPJ6), a worldwide leading provider of deposition equipment to the semiconductor industry, delivered in 2010, for the third year in succession, the best operational performance in its history with EUR 783.8m of revenues and a 35% EBIT margin. Guidance for 2011 has been set at EUR 800-900m of revenues with an EBIT margin of circa 35%.
Key Financials
(in EUR million)&nb...
Continue reading →
2011-02-24
AIXTRON SE has announced that its Close Coupled Showerhead® MOCVD Platform, a CRIUS® CCS reactor in the 6x2-inch (3x3-inch or 1x6-inch) wafer configuration, has been ordered by the Hong Kong University of Science and Technology (HKUST).
The Hong Kong based institute placed the order during the third quarter of 2010 and following delivery in the first quarter of 2011, the systems will be used for As/P/Sb based materials grown on Silicon substrates for electronics and photonics research applications. AIXTRON´s local...
Continue reading →
2011-02-23
Taiwan LED chip maker Ubilux has placed an order from Aixtron for two CRIUS II deposition systems in the 55x2-inch configuration to expand the company’s production capacity for GaN-based HB LEDs. It’s said that Ubilux placed this order in the fourth quarter of 2010 and the systems will be delivered in the first quarter of 2011....
Continue reading →
2011-02-22
AIXTRON SE has announced a new MOCVD reactor order from existing customer Ubilux of Tainan County, Taiwan. The order is for two AIXTRON CRIUS® II deposition systems in the 55x2-inch configuration which will be used to expand the company’s production capacity for GaN-based HB LEDs.
Ubilux placed the order in the fourth quarter of 2010 and the systems will be delivered in the first quarter of 2011. A local AIXTRON support team will commission the new reactors at the state of the art clean-room facilities housed in the Ubilux headqu...
Continue reading →
2011-02-18
AIXTRON SE announced a new order for MOCVD reactors from existing customer, the Institute of Semiconductors Chinese Academy of Sciences (ISCAS). The order comprises one AIX 200/4 in the 3x2-inch wafer configuration and one AIX 2600G3 IC in the 8x3-inch wafer configuration. The Beijing, PR China based institute placed the order during the third quarter of 2010 and following delivery in the second quarter of 2011, the systems will be used for production of electronic devices and red LEDs. The local AIXTRON support team will commission ...
Continue reading →
2011-02-15
AIXTRON SE today announced a new order for a 4-inch Black Magic Plasma Enhanced CVD (PECVD) system from The University of Texas at Austin.
After delivery of the system at the end of 2010, the local AIXTRON support team has carried out the installation and commissioning in the Department of Electrical and Computer Engineering, Microelectronics Research Center, at The University of Texas at Austin.
Assistant Professor Deji Akinwande and Professor Rod Ruoff from the Department of Electrical and Computer Engineering are working on seve...
Continue reading →
2011-02-11
AIXTRON SE announced a new order for MOCVD reactors from an Epistar joint venture, Epicrystal Corporation (Changzhou), Ltd. in China. The company, formed as a new joint venture between Epistar and Epistar’s customers, is engaged in manufacture and distribution of LED-based products. The order is made up of five AIX 2800G4 HT MOCVD systems. Following delivery in the second quarter of 2011, the systems will be used for production of ultra-high brightness (UHB) GaN-based LEDs. The new reactors will be commissioned by the local AIXT...
Continue reading →
2011-02-09
AIXTRON SE announced a new order for a CVD reactor from existing customer SemiSouth Laboratories of Starkville, MS, USA. The order is for an AIX 2800G4 WW deposition system in the 10x100 mm and the 6x150 mm configuration which will be used for the production of power silicon carbide (SiC) Junction Field Effect Transistor (JFET) and Schottky Barrier Diode microelectronic devices. SemiSouth placed the order in the fourth quarter of 2010 and the system will be delivered in the second quarter of 2011. The local AIXTRON support team will commi...
Continue reading →
2011-02-01
AIXTRON SE today announced a new order for a MOCVD reactor from Russian company Saturn Joint Stock Company (Saturn JSC). The order comprises one AIX 2800 G4-R 15x4-inch configuration deposition system including an automated wafer transfer system.
The Krasnodar based company placed the order during the fourth quarter of 2010 and following delivery in the second quarter of 2011, the system will be used to produce Gallium Arsenide (GaAs) solar cell epitaxial materials for the Russian space market. The new reactor will be commissioned by the AIXTRON...
Continue reading →
2011-01-19
AIXTRON SE today announced a new order for a silicon carbide (SiC) chemical vapor deposition (CVD) system from a major corporate research & development center located in the northeast of the USA. The order comprises a VP508GFR 1x4-inch wafer configuration Hot-Wall reactor system with additional features including a Dual Tube Hot-Wall reactor with the AIXTRON patented Gas Foil Rotation® for individual wafer uniformity and high temperature capability. The company placed the order during the third quarter of 2010. Following delivery in t...
Continue reading →
2011-01-13
AIXTRON SE today announced an order from mainland China. HC SemiTek placed an order for six additional CRIUS® Gallium Nitride epitaxial growth reactors. The six machines in the 31x2-inch wafer configuration have been delivered to the company’s modern facility in Wuhan.
Continue reading →
2011-01-11
Manufacturing Award at Printed Electronics and Photovoltaics USA 2010. The prize is awarded for exceptional work on developing high-efficiency components and manufacturing technologies for flexible electronics. AIXTRON has received the award for its OVPD® process1, an enabling technology for manufacturing OLEDs and other applications in organic electronics.
Continue reading →