2016-01-19

Plessey, Anvil Semiconductors and University of Cambridge Aim to Overcome the Green Gap with GaN on 3C-SiC/Si LEDs

The collaboration, which is partly funded by Innovate UK under the £14m Energy Catalyst Programme, follows on from work by Anvil Semiconductors and the Cambridge Centre for GaN at the University of Cambridge where they successfully grew cubic GaN on 3C-SiC on silicon wafers by MOCVD. The underlying 3C-SiC layers were produced by Anvil using its patented stress relief IP that enables growth of device quality silicon carbide on 100mm diameter silicon wafers.  
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2015-04-21

University of Cambridge Selects Veeco MOCVD System for LED Development

Veeco Instruments announced today that the University of Cambridge, one of the most highly regarded research universities in the world, has ordered thePropel™ Power Gallium Nitride (GaN) Metal Organic Chemical Vapor Deposition (MOCVD) System for GaN-on-silicon (Si) power electronics and light emitting diode (LED) research and development.
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Delivering a new game-day experience to Tar Heels fans at Kenan Stadium, Daktronics (NASDAQ: DAKT) of Brookings, South Dakota, partnered with the University of North Carolina (UNC) in Chapel Hill to manufacture and install 11 LED displays tota... READ MORE

Sumitomo Chemical is pleased to announce its participation in PCIM Europe 2026, which will be held in Nuremberg, Germany, from Tuesday, June 9 to Thursday, June 11, 2026. Established in 1979, this annual event showcases the latest advancements... READ MORE