2015-08-24

Toyoda Gosei Researchers Makes Breakthrough in GaN Nanoelectronics-transistor Blocking Voltage

Research reported in Applied Physics Express (APEX) by Tohru Oka and colleagues at the Research and Development Headquarters for TOYODA GOSEI Co., Ltd in Japan describe the development of ‘vertically orientated’ GaN-based transistors with blocking voltages exceeding 1kV. These findings are important for the application of nitride devices in automobiles and related areas. 
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Veeco Instruments Inc., a global leader in advanced semiconductor and compound semiconductor process equipment, today announced wins with Sparrow Quantum (Denmark) and Yeungnam University (South Korea), who have selected Veeco’s Molecula... READ MORE

Cree LED, a Penguin Solutions brand (Nasdaq: PENG), and SANlight GmbH, Schruns, Austria, today announced a partnership under which SANlight will use Cree LED’s J Series® products in its new STIXX-Series luminaires. Developed for appl... READ MORE