Research reported in Applied Physics Express (APEX) by Tohru Oka and colleagues at the Research and Development Headquarters for TOYODA GOSEI Co., Ltd in Japan describe the development of ‘vertically orientated’ GaN-based transistors with blocking voltages exceeding 1kV. These findings are important for the application of nitride devices in automobiles and related areas.
New XLamp® S Line LEDs enhance growth, last longer, lower energy costs
Horticulture and other forms of agricultural lighting require application-tuned ratios of spectral content, high efficacy and long lifetimes. Whether you are interest... READ
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Cree LED delivers superior brightness, light quality and efficiency for portable applications. Our XLamp® LEDs are ideally suited for torch, flashlight, tactical flashlight, head lamp, bike light, weapon light and lantern portable applicat... READ
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