Veeco Instruments announced that ON Semiconductor has ordered its Propel High-volume Manufacturing (HVM) Gallium Nitride (GaN) Metal Organic Chemical Vapor Deposition (MOCVD) system. Based on its successful beta evaluation of the Propel HVM tool, ON Semiconductor ordered the production-level Propel system for GaN power electronics manufacturing. As the industry’s first single-wafer cluster platform, the Propel GaN MOCVD system is specifically designed for high-voltage power-management devices used in data centers; automotive, information and communication technology; defense; aerospace and power distribution systems, among other applications.

Infineon Technologies AG introduced its first devices in a family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors at this year's European Microwave Week. As part of Infineon’s industry-leading GaN portfoliothe devices allow manufacturers of mobile base stations to build smaller, more powerful and more flexible transmitters. With higher efficiency, improved power density and more bandwidth than currently used RF power transistors, the new devices improve the economics of building infrastructure to support today’s cellular networks. Additionally, they will pave the way for the transition to 5G technology with higher data volumes and thus, enhanced user-experience.