2015-12-17

Building Components for GaN Power Switches

A team of engineers from Cornell University, the University of Notre Dame and the semiconductor company IQE has created gallium nitride (GaN) power diodes capable of serving as the building blocks for future GaN power switches -- with applications spanning nearly all electronics products and electricity distribution infrastructures.
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Following the successful launch of the NIGHT BREAKER LED SMART ECE H11 for headlights, ams OSRAM (SIX: AMS) is continuing its series of innovative LED retrofit solutions. In addition to the new NIGHT BREAKER LED C5W ECE, the first ECE R37-appr... READ MORE

Veeco Instruments Inc., a global leader in advanced semiconductor and compound semiconductor process equipment, today announced wins with Sparrow Quantum (Denmark) and Yeungnam University (South Korea), who have selected Veeco’s Molecula... READ MORE