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2016-05-26

NXP Unveils New High Performance GaN RF Power Transistors for Cellular Base Stations

NXP Semiconductors N.V. (NASDAQ:NXPI), today announced an expansion to its portfolio of 48V Gallium Nitride (GaN) RF power transistors optimized for Doherty power amplifiers for use in current and next-generation cellular base stations. The four new transistors collectively cover cellular bands from 1805 to 3600 MHz, meeting the needs of wireless carriers for superior performance at higher frequencies.
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