2016-05-26

NXP Unveils New High Performance GaN RF Power Transistors for Cellular Base Stations

NXP Semiconductors N.V. (NASDAQ:NXPI), today announced an expansion to its portfolio of 48V Gallium Nitride (GaN) RF power transistors optimized for Doherty power amplifiers for use in current and next-generation cellular base stations. The four new transistors collectively cover cellular bands from 1805 to 3600 MHz, meeting the needs of wireless carriers for superior performance at higher frequencies.
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Veeco Instruments Inc., a global leader in advanced semiconductor and compound semiconductor process equipment, today announced wins with Sparrow Quantum (Denmark) and Yeungnam University (South Korea), who have selected Veeco’s Molecula... READ MORE

Cree LED, a Penguin Solutions brand (Nasdaq: PENG), and SANlight GmbH, Schruns, Austria, today announced a partnership under which SANlight will use Cree LED’s J Series® products in its new STIXX-Series luminaires. Developed for appl... READ MORE