2017-05-11

X-FAB and Exagan Successfully Produce First GaN-on-Silicon Devices on 200-mm Wafers

X-FAB Silicon Foundries and Exagan, a start-up innovator of gallium-nitride (GaN) semiconductor technology enabling smaller and more efficient electrical converters, have demonstrated mass-production capability to manufacture highly efficient high-voltage power devices on 200-mm GaN-on-silicon wafers using X-FAB’s standard CMOS production facility in Dresden, Germany. This accomplishment is the result of a joint development agreement launched in 2015, enabling cost/performance advantages that could not be achieved with smaller wafers.
Continue reading

Veeco Instruments Inc., a global leader in advanced semiconductor and compound semiconductor process equipment, today announced wins with Sparrow Quantum (Denmark) and Yeungnam University (South Korea), who have selected Veeco’s Molecula... READ MORE

Cree LED, a Penguin Solutions brand (Nasdaq: PENG), and SANlight GmbH, Schruns, Austria, today announced a partnership under which SANlight will use Cree LED’s J Series® products in its new STIXX-Series luminaires. Developed for appl... READ MORE