2017-09-13

Cree’s Wolfspeed Launches Next Generation GaN HEMTs with Unmatched Efficiency

Wolfspeed, a Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced a new series of 28V GaN HEMT RF power devices. These new devices are capable of higher frequency operation to 8GHz with increased efficiency and higher gain as well as best-in-class reliability. RF design engineers are now able to build more efficient broadband power amplifiers for commercial and military wireless communications and radar applications.
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