2017-09-13

Cree’s Wolfspeed Launches Next Generation GaN HEMTs with Unmatched Efficiency

Wolfspeed, a Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced a new series of 28V GaN HEMT RF power devices. These new devices are capable of higher frequency operation to 8GHz with increased efficiency and higher gain as well as best-in-class reliability. RF design engineers are now able to build more efficient broadband power amplifiers for commercial and military wireless communications and radar applications.
Continue reading

Veeco Instruments Inc., a global leader in advanced semiconductor and compound semiconductor process equipment, today announced wins with Sparrow Quantum (Denmark) and Yeungnam University (South Korea), who have selected Veeco’s Molecula... READ MORE

Cree LED, a Penguin Solutions brand (Nasdaq: PENG), and SANlight GmbH, Schruns, Austria, today announced a partnership under which SANlight will use Cree LED’s J Series® products in its new STIXX-Series luminaires. Developed for appl... READ MORE