Latest results from IEMN show more than 1400 V breakdown voltage for both vertical and lateral measurements on ALLOS’ upcoming GaN-on-Si epiwafer product for 1200 V devices.
microLEDs: from headlamps to the data center When we think about the evolution of AI technology, developments in machine learning and large language models come readily to mind, as do the latest graphics processing units (GPUs), high-bandwidth... READ
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The question of what makes a building "smart" has been debated in the industry for years. ams OSRAM provided a clear answer at Light + Building 2026: it is light — not as illumination, but as a sensory nervous system. It percei... READ
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