2018-02-05

IEMN Shows More Than 1400 V on ALLOS’ New GaN-on-Si Epiwafer Product

Latest results from IEMN show more than 1400 V breakdown voltage for both vertical and lateral measurements on ALLOS’ upcoming GaN-on-Si epiwafer product for 1200 V devices.  
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This year's report plays a key role in aligning with the upcoming standards of the European Union and is built on a significantly broader data foundation than in previous years. For the first time, the report includes all LEDVANCE entities... READ MORE

Nichia, the world's largest LED manufacturer and inventor of the high-brightness blue and white LEDs, is pleased to announce that Cube Direct Mountable Chip received the LightFair Innovation Awards in the LED Chips & Modules category. ... READ MORE