2020-07-21

ALLOS Partners KAUST Research Team to Develop High Efficiency InGaN Red Micro LED on Silicon

ALLOS Semiconductors announced its collaboration with Prof. Ohkawa and his team at King Abdullah University of Science and Technology (KAUST) for realizing high efficiency nitride-based red LEDs on large diameter silicon substrates. The collaboration will focus on solving fundamental issues like the large lattice mismatch and the quantum-confined Stark effect (QCSE) which limit the adoption of red nitride-based LEDs for practical industry usage. In particular, for the emerging field of Micro LED displays there is a strong demand to enable red LEDs on ...
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A jointly developed demonstrator from ams OSRAM and DP Patterning points to where automotive lighting networks are heading: single-layer flexible printed circuit boards (FPCBs) instead of complex multilayer designs — and, in the structur... READ MORE

ams OSRAM, a global leader in lighting and sensing innovation, announced that its next-generation HDR flicker detection sensor has been integrated into the newly released Honor Magic 8 flagship series. Featuring ultra-high sensitivity, precisi... READ MORE