2020-07-21

ALLOS Partners KAUST Research Team to Develop High Efficiency InGaN Red Micro LED on Silicon

ALLOS Semiconductors announced its collaboration with Prof. Ohkawa and his team at King Abdullah University of Science and Technology (KAUST) for realizing high efficiency nitride-based red LEDs on large diameter silicon substrates. The collaboration will focus on solving fundamental issues like the large lattice mismatch and the quantum-confined Stark effect (QCSE) which limit the adoption of red nitride-based LEDs for practical industry usage. In particular, for the emerging field of Micro LED displays there is a strong demand to enable red LEDs on ...
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The Fighting Illini turned to Daktronics (NASDAQ-DAKT) of Brookings, South Dakota, to design, manufacture and install the largest main video display in college football, totaling 17,300+ square feet. The project includes 16 LED displays that c... READ MORE

Since January 1, 2026, drivers in Spain have been required to carry certified V16 warning lights on expressways and highways, which are directly connected to the traffic authorities when in use. With the LEDguardian ROAD FLARE Signal V16 IoT, ... READ MORE