According to report, recently the researchers at Wuhan University have found a way to reduce the misfit in the coalescence boundary of GaN grown on the sidewall regions and c-plane region of the substrate by adopting a patterned sapphire with silica array (PSSA) substrate. They mentioned that this substrate can increase the efficiency of InGaN/GaN flip-chip visible LEDs. PSSA is a patterned sapphire substrate with silica array. At the beginning of 2020, according to Shengjun Zhou, a professor at Wuhan University who directed the research, PSSA substrate ...