2021-12-30

Effect of Auger Electron–hole Asymmetry on Efficiency Droop in InGaN QW LEDs

Indium gallium nitride (InGaN)-based blue light-emitting diodes (LEDs) are the backbone of the solid-state lighting (SSL), but their luminous efficiency peaks under low current densities (<35A/cm2) and rolls off under high current injection levels (efficiency droop), requiring a design tradeoff between light output power, efficiency and cost. It is widely accepted that Auger recombination is the main cause for the experimentally observed large (~50%) efficiency droop in III–nitride LEDs. Yet there is no clear understanding of the origin of the magnitude of Au...
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Cree LED, a Penguin Solutions brand (Nasdaq: PENG), today announced that it has filed a patent infringement lawsuit in the United States District Court for the Northern District of Georgia against NanoLumens, Inc. The lawsuit asserts that Nano... READ MORE

WG Tech recently held an in-depth online discussion with Dr. Adi Abileah, former Chief Scientist at Planar Systems and a SID Fellow, to exchange insights on glass substrate based MiniLED technology innovation. Dr. Abileah, a globally respected... READ MORE