Plessey announces that its multi-award winning Orion beam forming module has been crowned a winner in the Components and Light Sources category of the 2017 Architectural SSL Product Innovation Awards (PIAs).

Plessey Semiconductors announced that it has entered into a sales representative agreement with ROM Electronik, an electronics distributor and provider of advanced complete solutions headquartered close to Istanbul, to expand its European network with coverage in the Turkish market for its GaN-on-Silicon LED products.  

Veeco announced that Nantong Tongfang Semiconductor Co., Ltd. has received shipment of Veeco's TurboDisc® K465i™ MOCVD System for research of GaN-on-Si HB LEDs. The system was delivered to Tongfang’s new LED Technology Center in Nantong, China. Professor Liu Gang, General Manager of Nantong Tongfang Semiconductor, stated, “We successfully utilize Veeco’s MOCVD systems in our current production of GaN-on-sapphire based LEDs. It was the logical choice to select Veeco for our new research into GaN-on-Si...

AIXTRON SE today announced a new MOCVD system order from Plessey Semiconductors Ltd., UK. The contract is for the first of a set of production ready CRIUS II-XL reactors in a 7x6-inch wafer configuration. The reactors are dedicated to the growth of high brightness LED wafers based on gallium nitride on silicon (GaN-on-Si) materials. AIXTRON’s local support team will install and commission this first reactor before the end of June 2012 in Plessey’s state-of-the-art cleanroom facility located in Plymouth, UK. Barry Dennington,...