2012-07-18

EpiGaN Successfully Utilizes AIXTRON MOCVD Reactors to Develop 8-inch GaN-on-Si Wafers

AIXTRON SE announced that EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material in Hasselt, Belgium, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in 8” configuration. It will use the systems to commercialize 6-inch GaN-on-Silicon wafers for a range of power and RF electronics devices as well as to develop the next generation of 200 mm GaN-on-Silicon wafers. The reactors were installed and commissioned by AIXTRON Europe’s service support team at the co...
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Nichia, the world's largest LED/Laser Diode manufacturer and inventor of the high-brightness blue and white LEDs, is pleased to announce that research findings on a circadian lighting1 environment incorporating Nichia's Dynasolis&trade... READ MORE

Celebrating its 25th anniversary this year, Absen, the global leader in LED display technology and solutions, will demonstrate the power of collaboration at Integrated Systems Europe (ISE) 2026 on stand 3M400.Together, Absen and its ecosystem par... READ MORE