2012-07-18

EpiGaN Successfully Utilizes AIXTRON MOCVD Reactors to Develop 8-inch GaN-on-Si Wafers

AIXTRON SE announced that EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material in Hasselt, Belgium, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in 8” configuration. It will use the systems to commercialize 6-inch GaN-on-Silicon wafers for a range of power and RF electronics devices as well as to develop the next generation of 200 mm GaN-on-Silicon wafers. The reactors were installed and commissioned by AIXTRON Europe’s service support team at the co...
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The Fighting Illini turned to Daktronics (NASDAQ-DAKT) of Brookings, South Dakota, to design, manufacture and install the largest main video display in college football, totaling 17,300+ square feet. The project includes 16 LED displays that c... READ MORE

Since January 1, 2026, drivers in Spain have been required to carry certified V16 warning lights on expressways and highways, which are directly connected to the traffic authorities when in use. With the LEDguardian ROAD FLARE Signal V16 IoT, ... READ MORE