2012-07-18

EpiGaN Successfully Utilizes AIXTRON MOCVD Reactors to Develop 8-inch GaN-on-Si Wafers

AIXTRON SE announced that EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material in Hasselt, Belgium, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in 8” configuration. It will use the systems to commercialize 6-inch GaN-on-Silicon wafers for a range of power and RF electronics devices as well as to develop the next generation of 200 mm GaN-on-Silicon wafers. The reactors were installed and commissioned by AIXTRON Europe’s service support team at the co...
Continue reading

A jointly developed demonstrator from ams OSRAM and DP Patterning points to where automotive lighting networks are heading: single-layer flexible printed circuit boards (FPCBs) instead of complex multilayer designs — and, in the structur... READ MORE

ams OSRAM, a global leader in lighting and sensing innovation, announced that its next-generation HDR flicker detection sensor has been integrated into the newly released Honor Magic 8 flagship series. Featuring ultra-high sensitivity, precisi... READ MORE