ON Semiconductor has joined the multi-partner, industrial research and development program at imec, to develop next-generation GaN-on-Silicon power devices. Currently, GaN-based power devices are too expensive for large volume manufacturing, as they are fabricated on small diameter wafers using non-standard production processes. Imec’s research program is focused on developing GaN-on-silicon technology on 200 mm wafers, as well as reducing the cost and improving the performance of GaN devices. Imec’s power devices on 200mm CMOS-compatible GaN-on-Sili...