2012-11-02

Japanese NGK Insulators Develops GaN Wafers to Double Green LED Luminous Efficiency

NGK Insulators, Ltd. of Japan has announced the development of high-quality GaN wafers to reduce defects and roughly double the luminous efficiency of green LEDs over previous models. NGK achieved this breakthrough by using a crystal growth technology that it has improved through a proprietary approach. The GaN wafers developed by NGK feature low defect density across the entire 2-inch diameter of the wafer surface and have a colorless transparency. NGK achieved this through proprietary improvements to liquid phase epitaxial technology for single crystal growth. ...
Continue reading

This year's report plays a key role in aligning with the upcoming standards of the European Union and is built on a significantly broader data foundation than in previous years. For the first time, the report includes all LEDVANCE entities... READ MORE

Nichia, the world's largest LED manufacturer and inventor of the high-brightness blue and white LEDs, is pleased to announce that Cube Direct Mountable Chip received the LightFair Innovation Awards in the LED Chips & Modules category. ... READ MORE