2012-12-27

BluGlass Utilizes RPCVD Process to Develop p-type GaN Layers for LEDs

BluGlass has utilized its low temperature RPCVD process to develop p-type GaN, an essential material that make up the top layers of a nitride LED.   Preliminary testing has been carried out on the sample using a 0.5mm diameter size p-type indium contact. The light output was measured with a UV-detector positioned under the wafer calibrated at the wavelength of the light emission. At 20mA and 4.7V, the light output was 270µW (light emission at 458nm with a full width half maximum of 19nm) At 50mA and 5.5V, the light output was 1.23mW (light emission ...
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Nichia, the world's largest LED/Laser Diode manufacturer and inventor of the high-brightness blue and white LEDs, is pleased to announce that research findings on a circadian lighting1 environment incorporating Nichia's Dynasolis&trade... READ MORE

Celebrating its 25th anniversary this year, Absen, the global leader in LED display technology and solutions, will demonstrate the power of collaboration at Integrated Systems Europe (ISE) 2026 on stand 3M400.Together, Absen and its ecosystem par... READ MORE