2012-12-27

BluGlass Utilizes RPCVD Process to Develop p-type GaN Layers for LEDs

BluGlass has utilized its low temperature RPCVD process to develop p-type GaN, an essential material that make up the top layers of a nitride LED.   Preliminary testing has been carried out on the sample using a 0.5mm diameter size p-type indium contact. The light output was measured with a UV-detector positioned under the wafer calibrated at the wavelength of the light emission. At 20mA and 4.7V, the light output was 270µW (light emission at 458nm with a full width half maximum of 19nm) At 50mA and 5.5V, the light output was 1.23mW (light emission ...
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The Fighting Illini turned to Daktronics (NASDAQ-DAKT) of Brookings, South Dakota, to design, manufacture and install the largest main video display in college football, totaling 17,300+ square feet. The project includes 16 LED displays that c... READ MORE

Since January 1, 2026, drivers in Spain have been required to carry certified V16 warning lights on expressways and highways, which are directly connected to the traffic authorities when in use. With the LEDguardian ROAD FLARE Signal V16 IoT, ... READ MORE