2013-02-19

Laytec Launches New in-situ GaN LED Monitoring System

Laytec has upgraded in-situ GaN LED monitoring system. LED manufacturers would know the emission wavelength of the final device during MOCVD growth. Today, according to the Solid State Lighting road map, the wavelength variation across a wafer should be less than 1 nm. This means a less than 1 K (10C) variation of the GaN surface temperature during InGaN MQW growth. LayTec’s Pyro 400 is widely used for enabling fab-wide GaN surface temperature uniformity in many LED manufacturers production lines. Meanwhile, more complex LED structur...
Continue reading

Following the successful launch of the NIGHT BREAKER LED SMART ECE H11 for headlights, ams OSRAM (SIX: AMS) is continuing its series of innovative LED retrofit solutions. In addition to the new NIGHT BREAKER LED C5W ECE, the first ECE R37-appr... READ MORE

Veeco Instruments Inc., a global leader in advanced semiconductor and compound semiconductor process equipment, today announced wins with Sparrow Quantum (Denmark) and Yeungnam University (South Korea), who have selected Veeco’s Molecula... READ MORE