2018-11-22

InnoScience Technology Orders AIXTRON’s MOCVD Systems for GaN Device Development

AIXTRON reported that the company will deliver its AIX G5+ C MOCVD systems to China-based InnoScience Technology for the development of GaN power devices. InnoScience Technology has ordered multiple MOCVD systems from AIXTRON to expand its production of GaN-on-Si devices for various applications. GaN power devices are used for applications such as efficient power supplies for PC and servers or LiDAR and wireless power transfer requiring high-speed switching. (Image: AIXTRON) In the scope of the increasing number of applicatio...
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2013-09-04

Veeco and Imec Jointly Develop GaN-on-Si Devices for LED and Power Applications

Nanoelectronics research centrer Imec of Belgium and Veeco Instruments Inc. are collaborating on a project aimed at lowering the cost of producing gallium nitride on silicon (GaN-on-Si) -based power devices and LEDs.
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This year's report plays a key role in aligning with the upcoming standards of the European Union and is built on a significantly broader data foundation than in previous years. For the first time, the report includes all LEDVANCE entities... READ MORE

Nichia, the world's largest LED manufacturer and inventor of the high-brightness blue and white LEDs, is pleased to announce that Cube Direct Mountable Chip received the LightFair Innovation Awards in the LED Chips & Modules category. ... READ MORE