2018-11-22

InnoScience Technology Orders AIXTRON’s MOCVD Systems for GaN Device Development

AIXTRON reported that the company will deliver its AIX G5+ C MOCVD systems to China-based InnoScience Technology for the development of GaN power devices. InnoScience Technology has ordered multiple MOCVD systems from AIXTRON to expand its production of GaN-on-Si devices for various applications. GaN power devices are used for applications such as efficient power supplies for PC and servers or LiDAR and wireless power transfer requiring high-speed switching. (Image: AIXTRON) In the scope of the increasing number of applicatio...
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2013-09-04

Veeco and Imec Jointly Develop GaN-on-Si Devices for LED and Power Applications

Nanoelectronics research centrer Imec of Belgium and Veeco Instruments Inc. are collaborating on a project aimed at lowering the cost of producing gallium nitride on silicon (GaN-on-Si) -based power devices and LEDs.
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microLEDs: from headlamps to the data center When we think about the evolution of AI technology, developments in machine learning and large language models come readily to mind, as do the latest graphics processing units (GPUs), high-bandwidth... READ MORE

The question of what makes a building "smart" has been debated in the industry for years. ams OSRAM provided a clear answer at Light + Building 2026: it is light — not as illumination, but as a sensory nervous system. It percei... READ MORE