2018-11-22

InnoScience Technology Orders AIXTRON’s MOCVD Systems for GaN Device Development

AIXTRON reported that the company will deliver its AIX G5+ C MOCVD systems to China-based InnoScience Technology for the development of GaN power devices. InnoScience Technology has ordered multiple MOCVD systems from AIXTRON to expand its production of GaN-on-Si devices for various applications. GaN power devices are used for applications such as efficient power supplies for PC and servers or LiDAR and wireless power transfer requiring high-speed switching. (Image: AIXTRON) In the scope of the increasing number of applicatio...
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2013-09-04

Veeco and Imec Jointly Develop GaN-on-Si Devices for LED and Power Applications

Nanoelectronics research centrer Imec of Belgium and Veeco Instruments Inc. are collaborating on a project aimed at lowering the cost of producing gallium nitride on silicon (GaN-on-Si) -based power devices and LEDs.
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A jointly developed demonstrator from ams OSRAM and DP Patterning points to where automotive lighting networks are heading: single-layer flexible printed circuit boards (FPCBs) instead of complex multilayer designs — and, in the structur... READ MORE

ams OSRAM, a global leader in lighting and sensing innovation, announced that its next-generation HDR flicker detection sensor has been integrated into the newly released Honor Magic 8 flagship series. Featuring ultra-high sensitivity, precisi... READ MORE