2018-11-22

InnoScience Technology Orders AIXTRON’s MOCVD Systems for GaN Device Development

AIXTRON reported that the company will deliver its AIX G5+ C MOCVD systems to China-based InnoScience Technology for the development of GaN power devices. InnoScience Technology has ordered multiple MOCVD systems from AIXTRON to expand its production of GaN-on-Si devices for various applications. GaN power devices are used for applications such as efficient power supplies for PC and servers or LiDAR and wireless power transfer requiring high-speed switching. (Image: AIXTRON) In the scope of the increasing number of applicatio...
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2013-09-04

Veeco and Imec Jointly Develop GaN-on-Si Devices for LED and Power Applications

Nanoelectronics research centrer Imec of Belgium and Veeco Instruments Inc. are collaborating on a project aimed at lowering the cost of producing gallium nitride on silicon (GaN-on-Si) -based power devices and LEDs.
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XLamp® CTW LEDs bring lighting flexibility to life New XLamp® CTW Series – Two-Channel CCT-Tunable White COB LEDs Cree LED’s XLamp CTW Series redefines CCT-tunable COB LEDs with unmatched lumen density, efficiency and de... READ MORE
ams OSRAM, a global leader in innovative light and sensor solutions today held a roundtable forum spotlighting new opportunities with high precision illumination characterization. The event brought together experts from industry, academia, and... READ MORE