University of California Santa Barbara (UCSB) in the USA suggests that indium gallium nitride (InGaN) red micro-sized light-emitting diodes (μLEDs) could provide a solution for displays [Panpan Li et al, Appl. Phys. Lett., v119, p081102, 2021].   Although the high indium content leads to relatively low external quantum efficiency (EQE) compared with commercial aluminium indium gallium phosphide (AlInGaP) regular-size LEDs, which can reach 20-30%, the UCSB research shows that the InGaN devices maintain their ~2.5% EQE as the dimensio...