According to AIXTRON SE's press release, Japanese group Toyoda Gosei has acquired an enhanced 5x4-inch CRIUS Close Coupled Showerhead (CCS) system to manufacture Blue and Ultra Violet (UV) LEDs. The tool is scheduled for delivery in the first half of 2017.

AIXTRON, a worldwide leading provider of deposition equipment to the semiconductor industry, announced today that Nanchang Kingsoon, a recently founded Chinese manufacturer of optoelectronic devices, has ordered multiple MOCVD cluster tools to expand manufacturing capacities in the area of gallium arsenide-based red, orange and yellow (ROY) LEDs and solar cells. All systems will be delivered in the course of the year.

AIXTRON, a worldwide leading provider of deposition equipment to the semiconductor industry, has sold the first OPTACAP™-200 encapsulation tool to a major Asian display manufacturer. The standalone R&D system that handles substrate sizes of 200 mm x 200 mm was ordered in the third quarter 2015 and is scheduled for delivery in the first quarter 2016.

AIXTRON SE, one of the world’s leading manufacturers of deposition systems for the semiconductor industry, today announced that it has acquired privately held Silicon Valley-based PlasmaSi, Inc. effective 1 April 2015. The purchase price is US $16 million and will be paid in cash.

AIXTRON, a worldwide leading provider of deposition equipment to the semiconductor industry, today announced that Taiwanese group Episil Semiconductor Wafer, Inc. has successfully put into operation an AIX G5 WW (Warm-Wall) reactor for silicon carbide (SiC) epitaxy.

Another challenging year awaits Taiwanese manufacturers as major Chinese LED chip manufacturer San’an Opto acquires a total of 100 MOCVD reactors in September and December and have said that the company will continue to headhunt Taiwanese experts, according to a report of China Times.

On November 6th AIXTRON presented its latest generation of MOCVD reactors for HB-LED manufacturing at the SSL China conference. The advanced feed-back control capabilities of these reactors are based on two fully integrated LayTec OEM metrology sub-systems (Inside MiniR and Inside TTC) with typically seven metrology heads in total. Emissivity corrected susceptor surface temperature and double wavelength reflectance is provided by the industry proven LayTec in-situ metrology. As additional options also wafer bow and GaN surface temperature can be measured by Inside MiniRC and Inside P400 (OEM version of LayTec’s Pyro 400). Aixtron’s and LayTec’s engineering teams worked closely together in order to provide this market leading in-situ metrology solution for both our customers in the LED industry.

AIXTRON, a leading provider of deposition equipment to the semiconductor industry, today announced financial results for the third quarter 2014 and first nine months of 2014.

AIXTRON, a leading provider of deposition equipment to the semiconductor industry, has teamed up with research institution Fraunhofer IISB (Institute for Integrated Systems and Device Technology) in Erlangen, Germany, to develop 150 mm Silicon Carbide (SiC) epitaxy processes using the new AIXTRON 8x150 mm G5WW Vapor Phase Epitaxy (VPE) system. 

Vishay Semiconductor, Heilbronn, has acquired an MOCVD system from AIXTRON to expand its infrared LED production capacities. The company aims to substantially extend its product portfolio in this area. The system was delivered to Vishay at the end of March.

AIXTRON, a leading provider of deposition equipment to the semiconductor industry, today announced revenues of EUR 46.2 million (US $62.06 million) for the second quarter of 2014, 5 percent higher sequentially (Q1/2014: EUR 43.9 million) and 2 percent higher compared to one year ago (Q2/2013: EUR 45.3 million). Q2/2014 EBIT at EUR -10.6 million (Q2/2013; EUR -9.8 million) and net result at EUR -11.6 million (Q2/2013: EUR -11.8 million) were both also broadly unchanged year-on-year.

AIXTRON SE announced that Jiangsu Trifortune Electronic Technology Co. Ltd., China, has ordered an AIX G5 HT system to develop gallium nitride based high brightness light emitting diodes (HB-LEDs). The AIXTRON system will be equipped to handle 56x2-inch wafers per run and will be installed at Trifortune’s R&D center. The developed process will be transferred to mass production in the Jiangsu area upon successful completion of the research.

AIXTRON SE today announced that Chinese company Wuhan Huagong Genuine Optics Tech Co., Ltd (HG Genuine), a leading developer and manufacturer of optical components in China, has ordered a 6x2-inch Close Coupled Showerhead (CCS) epitaxial deposition system for production of light emitting and detection devices on indium phosphide substrates. HG Genuine’s Chief Scientist, Zhaozhong Wang, reports: “This repeat-order reflects our complete satisfaction with the performance of AIXTRON’s technology. Our existing system has demonstrat...

On August 15, AIXTRON SE announced that the University of Cincinnati (UC), USA, has ordered a new BM system to further develop its longstanding research into carbon nanotubes (CNT). The system set up for handling 4-inch substrates has been installed at Nanoworld Laboratories – an interdepartmental research facility that includes faculties from Mechanical Engineering, Materials Engineering, Chemistry, Physics and Medical School, and is directed by Professors Vesselin Shanov and Mark Schulz. Professor Shanov, comments: “The BM system p...

AIXTRON SE, a leading provider of deposition equipment to the semiconductor industry, today announced revenues of EUR 45.3m for the second quarter of 2013, representing a quarterly sequential increase of 13 percent compared to EUR 40.2m in Q1/2013. AIXTRON also recorded improvements in its gross profit and operating result (EBIT). This development reflects first positive impacts from the 5-Point-Program, which was started in Q1/2013. Efficiency improvements and cost cutting measures resulted in reductions in both cost of sales and operating expenses. Ke...

AIXTRON has announced another repeat order from Taiwan’s EpiLEDs Co., Ltd. to support ramp-up of GaN-based LED production for lighting applications. The order for two CRIUS II-L 69x2-inch systems was made in the first quarter of 2013, for delivery in the third quarter of 2013. EpiLEDs is exclusively producing with MOCVD equipment from AIXTRON. Mr. MingSen Hsu, President at EpiLEDs, comments: “We want a smooth ramp-up of production based on existing, proven technology. The CRIUS II-L meets our requirements for hig...

It is reported that AIXTRON SE received the 2013 LEDinside Aurora Award in the category "Most efficient MOCVD Equipment" on June 11 for its AIX G5+ technology for Gallium-Nitride-on-Silicon (GaN-on-Si). AIXTRON's system was chosen due to its production efficiency and technological advancement and was already awarded with the CS Industry Award in this March. "Producing gallium nitride based LEDs on 200 mm silicon substrates is a promising route towards a much lower chip manufacturing cost," Andreas Tönnis state...

Long-term collaboration for growth of 6-inch GaN-on-Si wafers planned AIXTRON SE today announced that the University of Cambridge has successfully commissioned another multi-wafer Close Coupled Showerhead (CCS) MOCVD reactor at its new facility at the Department of Material Science and Metallurgy. The CCS 6x2-inch system will be configured to handle single 6-inch (150mm) wafers (1x6-inch).  “We will be using the systems to expand our research efforts for LED and electronic devices based on gallium nitride (GaN) epitaxy on 6-inch silico...

AIXTRON SE announced that it is participating as a key partner in the recently announced European Union (EU) Future Emerging Technology (FET) flagship project “Graphene”. As part of the consortium, AIXTRON will bring its expertise in deposition processes for graphene and as such shall lead the production work package of the flagship. Dr. Bernd Schulte, Chief Operating Officer at AIXTRON, comments: “Congratulations to the leadership and partners of the Graphene Flagship. AIXTRON is proud to be a part of this future-oriente...

AIXTRON SE announced that China’s Peking University is adding to its AIXTRON equipment base with an order for a further Close Coupled Showerhead (CCS) reactor with capacity for three 2-inch (3x2”) substrates in a single run. The order was made in the second quarter of 2012 with delivery scheduled for the first quarter of 2013.   One of the researchers who will be using the AIXTRON system is Professor Shen Bo. He says: “We already have an AIXTRON CCS system in use, and we are very satisfied with it. We now needed ...

AIXTRON SE announced that US company Transphorm Inc. is stepping up production of gallium nitride on silicon (GaN-on-Si) with its latest order of AIXTRON’s G5+ MOCVD system, capable of handling five 200 mm (5x8-inch) wafers. The order was made in the fourth quarter of 2012 with delivery due in the second quarter of 2013. Primit Parikh, President of Transphorm comments: “We are not just increasing our capacity with this order. This new system also expands our capability from 150 mm to 200 mm diameter wafers, providing economies of scale. We ...

AIXTRON SE has been awarded the 2013 Compound Semiconductor Manufacturing Award for its latest development, the AIX G5+ reactor for gallium nitride on silicon (GaN-on-Si). The Award recognizes key areas of innovation surrounding the chip manufacturing process from research to completed device, focusing on the people, processes and products that drive the industry forward. Editor Richard Stevenson from Compound Semiconductor (CS) magazine presented the award yesterday, March 4, 2013 to AIXTRON’s Vice President Europe Dr. Frank Schulte. &...

AIXTRON SE announced that in the third quarter of 2012 long-term customer Formosa Epitaxy Inc. (FOREPI), Taiwan, placed a new order for multiple CRIUS II-L MOCVD production systems in a 69x2-inch configuration. All systems will be used for the manufacturing of ultra-high brightness (UHB) GaN-based blue and white LEDs. AIXTRON’s local service team has started installing and commissioning the new systems in the fourth quarter of 2012 at FOREPI’s new state-of-the-art factory in the Pin-Jen industrial zone, Taiwan. Delivery...

AIXTRON SE announced that China’s Focus Lightings Tech Inc. has ordered a number of CRIUS II-L systems for mass production of gallium nitride (GaN) light emitting diode (LED) epitaxial wafers. The systems will be configured to handle up to 69x2-inch wafers per run. The purchase was made in the fourth quarter of 2012. Shipment of the systems started in December 2012. Huarong Pan, Chairman of Focus Lightings Tech, comments: “We eagerly await delivery of AIXTRON’s latest CRIUS Close Coupled Showerhead (CCS) generation ...

Dynax Semiconductor Inc. of China has placed its first purchase order for an AIXTRON Close Coupled Showerhead (CCS) CRIUS MOCVD system aimed at production of nitride semiconductor electronic devices. It will be the first system in China dedicated to GaN electronics.   The AIXTRON system will be used to grow GaN and related nitride semiconductor epitaxial layers on silicon carbide and silicon substrates for microwave and power devices. After installation and commissioning the system is now ready to produce high quality GaN epi-wafers. &ldq...

AIXTRON SE today announced the sale of an AIX 2600G3 Planetary Reactor to Union Optronics Corp. (UOC) to expand production of gallium arsenide based laser diodes. The system is capable of handling 49x2-inch wafers in each run. The purchase was made in the second quarter of 2012 with delivery due in the fourth quarter of 2012. President Dr. Hir-Ming Shieh of UOC reports “Based on the good experience with our  existing AIXTRON AIX 2600G3 system, we are now preparing capacity for expanded business opportunities with this new AIX 2600G...

At this year’s China SSL Conference , AIXTRON again has hosted an MOCVD seminar along with the China Solid State Lighting Alliance (CSA). More than 200 decision-makers from industry and research took part in AIXTRON’s International Short Course on MOCVD held in Guangzhou. Dr. Bernd Schulte, Tim Wang, AIXTRON SE “Prices for LED bulbs as replacements for 40W incandescent bulbs in some countries are below the USD 10.00 mark”, remarks Dr. Bernd Schulte, COO & Member of the AIXTRON E...

AIXTRON SE today announced that the Suzhou Institute of Nano-tech and Nano-bionics (SINANO), China, has made a purchase order for two AIXTRON Close Coupled Showerhead (CCS) systems to extend the center’s nitride semiconductor research. The order has been placed in the third quarter with deliveries planned in the fourth quarter of 2012 and in the first quarter of 2013. One system, capable of handling 6x2-inch substrates, focuses primarily on R&D, while the other system, a CRIUS, is designed for mass production, handling up to 31x2-inc...

AIXTRON SE today announced a new BM system order from the Institute of Metal Research (IMR) at the Chinese Academy of Sciences. The contract is for a BM Pro PECVD system in a 4-inch wafer configuration, which will be dedicated to the production of carbon nanotubes and graphene. The order was placed in the first quarter of 2012 and the system will be delivered in the third quarter of 2012. AIXTRON’s local support team will install and commission the deposition system at the Institute’s state-of-the-art cleanroom facility. “We are ...

AIXTRON SE announced that more than 200 participants, mostly manufacturing customers, attended its MOCVD seminar for LED production held at the AIXTRON China Ltd. Training Center & Lab in Suzhou, China. The seminar was co-organized by the China Solid State Lighting Alliance (CSA) and was the first of a series within the framework of AIXTRON’s cooperation with SINANO, the Suzhou Institute for Nanotechnology and Nanobionics.         At the seminar, a focused overview was given into the fi...