2012-09-11

Low Energy Electronics Systems (LEES) Project to Promote Energy Efficiency in Singapore with AIXTRON Systems

Gan-on-Si: Logic and Light on a Chip The research project Low Energy Electronics Systems (LEES) has started its work with a kick-off meeting. The program’s initiator is the renowned Singapore MIT Alliance for Research and Technology (SMART) Center based in Singapore. The LEES team consists of eminent research and science specialists and is targeting the development of cutting-edge technology to increase energy efficiency and advance high-tech industries that complement microelectronics. Two AIXTRON CRIUS 1x200 mm systems, which the proj...
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2012-08-28

University of Stuttgart Places Repeat Order for AIXTRON System Joint work research program for III-V-on-Si diode lasers

University of Stuttgart has made a repeat order for AIXTRON’s CCS (Close Coupled Showerhead) system that is capable of handling three 2-inch (3x2”) substrates at a time. The system will be used by University of Stuttgart’s Institute of Semiconductor Optics and Functional Interfaces (Institut für Halbleiteroptik und Funktionelle Grenzflächen, IHFG) research group. IHFG researchers specialize in semiconductor optics and epitaxy. The new AIXTRON system will be used to expand IHFG’s work in gallium arsenide (GaA...
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2012-08-16

AIXTRON Receives New Reactor Order from Jilin University for GaN UV and White LED Research

AIXTRON SE today announced a new MOCVD system order from existing customer Jilin University China. The contract is for one CCS reactor in a 3x2-inch wafer configuration, which will be dedicated to the growth of gallium nitride materials for UV and white LEDs. One of AIXTRON’s local support teams has installed and commissioned the new reactor in a state-of-the-art clean-room facility at Jilin University in Changchun, China. Dr. Zhang of the Jilin University, State Key Laboratory on Integrated Optoelectronics, comments, “We alre...
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2012-08-14

National Central University Taiwan Develops GaN-on-Si Power Devices with AIXTRON Reactor

AIXTRON SE today announced a new MOCVD system order from National Central University (NCU) in Taiwan. Existing customer, NCU has placed an order for one 1x6-inch AIXTRON Close Coupled Showerhead MOCVD system, which will be dedicated to the growth of GaN epitaxial structures on 6-inch silicon substrates, for use in the research and development of power management devices. AIXTRON’s local support team has installed and commissioned the new reactor in the state-of-the-art cleanroom facility at NCU’s Microwave and Optoelectroni...
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2012-07-31

Finisar places repeat order for AIXTRON G4 system

AIXTRON SE today announced a new MOCVD system order from Finisar Corporation, USA, a market leader in high-speed optical data communications. The order is for one AIX 2800G4-TM automated reactor dedicated to the growth of indium phosphide materials for lasers and detectors. The new order was placed after the first AIX 2800G4-TM system had been successfully installed and qualified at Finisar’s facility in Allen, Texas, USA. AIXTRON’s local support team will install and commission the new reactor in a state-of-the-art clean-room at t...
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2012-06-27

Taiwan’s National Chung Hsing University Orders AIXTRON CCS MOCVD System for GaN-on-Silicon Research

AIXTRON SE announced that National Chung Hsing University (NCHU) in Taiwan, has placed an order for one Close Coupled Showerhead (CCS) MOCVD system in a 3x2-inch wafer configuration. NCHU will use the CCS system for conducting research into the hetero-epitaxial growth of Gallium Nitride alloys on Silicon wafers (“GaN-on-Si”). One of AIXTRON´s local service support teams has already installed and commissioned the new reactor in a dedicated cleanroom facility at NCHU’s site in Taichung, Taiwan. Prof. Wuu of th...
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2012-06-20

Tim Wang appointed General Manager of AIXTRON China Ltd.

AIXTRON SE today announced that Mr. Tim Wang , has been appointed General Manager of its subsidiary AIXTRON China Ltd. Mr. Wang has been working in the semiconductor industry in the US and China for many years and most recently held the position of Regional President of Novellus Systems in China.   Dr. Bernd Schulte, Executive Vice President and Chief Operating Officer of AIXTRON SE, comments: “The Chinese MOCVD market has become increasingly important over recent years and China is expected to play a major role in fu...
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2012-06-14

AIXTRON wins LEDinside Aurora Award 2012

Best MOCVD Equipment Award 2012 for latest CRIUS II-XL Technology At the LEDforum 2012 in Guangzhou, China, AIXTRON SE has been awarded the 2012 LEDinside Aurora Award in the “Best MOCVD Equipment” category. With this award, the jury has honored and recognized outstanding products and performance in the LED industry. AIXTRON received its award for its latest CRIUS II-XL technology. Dr. C. L. Liu (on the right), Chairman of Trendforce Corporation, presented the award to AIXTRON’s Vice P...
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2012-06-12

Plessey Orders AIXTRON CRIUS II-XL Reactor for GaN-on-Si LED Production

AIXTRON SE today announced a new MOCVD system order from Plessey Semiconductors Ltd., UK. The contract is for the first of a set of production ready CRIUS II-XL reactors in a 7x6-inch wafer configuration. The reactors are dedicated to the growth of high brightness LED wafers based on gallium nitride on silicon (GaN-on-Si) materials. AIXTRON’s local support team will install and commission this first reactor before the end of June 2012 in Plessey’s state-of-the-art cleanroom facility located in Plymouth, UK. Barry Dennington,...
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2012-06-05

China’s Sinoepi to Produce Nitride LED Wafers with a AIXTRON CRIUS II-L System

AIXTRON SE today announced that a new customer, Sinoepi, a leading manufacturer of wafer materials in China, has placed an order for one MOCVD system, a CRIUS II-L reactor in a 69x2-inch wafer configuration. The system will be used for the production of epitaxial wafers for ultra-high brightness (UHB) gallium nitride (GaN) based LEDs. The reactor was ordered in the fourth quarter of 2011 and was delivered during the second quarter of 2012. AIXTRON´s local service support team will install and commission the CRIUS II-L at the Sinoepi ...
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2012-03-13

Quantum Wafer Orders AIXTRON MOCVD Units

Recently, Quantum Wafer Inc., China has placed an order from AIXTRON for three more AIXTRON MOCVD units. All systems will be dedicated to the growth of high brightness LED wafers based on GaN materials.   The order was placed in the fourth quarter of 2011 and delivery will take place during the first quarter of 2012. AIXTRON’s local support team will install and commission the new reactors in a state-of-the-art clean-room facility at Quantum Wafer’s factory in China. “We have been very impressed with the performance of the...
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2012-03-06

New shares from AIXTRON stock option program will be traded under separate ISIN

AIXTRON SE, worldwide leading provider of deposition equipment to the semiconductor industry, has a number of stock option programs in place that grant employees and the members of the Executive Board the right to purchase AIXTRON shares under certain conditions. Under the terms of the stock option plan 2007, stock options can currently be exercised. New shares resulting from exercised options are not entitled to a dividend for fiscal year 2011 and will therefore be traded on the Frankfurt Stock Exchange under the separate ISIN DE000A1MMEF7 until and incl...
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2012-03-05

Epistar Receives AIXTRON CRIUS II-XL MOCVD System for UHB Blue and White LEDs Production

Epistar has received AIXTRON’s first CRIUS II-XL system in a 19x4-inch wafer configuration for the mass production of ultra-high brightness (UHB) blue and white LEDs. The CRIUS II-XL system has successfully passed the process demonstration and acceptance test. Introduced in November 2011, the AIXTRON CRIUS II-XL configuration offers reactor capacity as high as 19x4 inch, which represents a capacity increase of 46% compared to the original CRIUS II, giving it the highest throughput and lowest cost of ownership in the whole LE...
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2012-03-01

AIXTRON remains confident in challenging market environment

- Year end inventory adjustment reflects current difficult market conditions - Dividend policy remains unchanged   - Profitable 2012 performance predicted with strong R&D investments planned AIXTRON SE (ISIN DE000A0WMPJ6, DE000A1MMEF7), a worldwide leading provider of deposition equipment to the semiconductor industry, delivered in 2011 – despite the market weakness in the second half – EUR 611.0m of revenues and a 18% EBIT margin. Although 2012 is expected to be a transitional year between two LED investment cycles with...
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2011-12-16

AIXTRON Received New MOCVD Reactors Order from Nantong Tongfang

AIXTRON SE has received a multiple AIX G5 HT reactors in 56x2-inch and 14x4-inch configurations order from Nantong Tongfang, China. Nantong Tongfang placed the order in the first quarter of 2011. Delivery of the systems has been started in the second quarter of 2011 and will be completed in the fourth quarter of 2011. A local AIXTRON support team will install and commission the new reactors in state-of-the-art clean-rooms at the company’s factory in China. The Chinese company will use these systems for the growth of high brightness LEDs. Acc...
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2011-12-02

AIXTRON Receives An Order from Arima Changzhi

AIXTRON SE has received an order from Arima Changzhi, a JV LED manufacturing company involving Changzhi High Tech Industry Investment Co., China, and Taiwan Arima Optoelectronics, for three 42x2-inch wafer configuration AIX 2800G4 HT MOCVD systems as well as three 11x4-inch wafer configuration AIX 2800G4 HT MOCVD systems. A local AIXTRON service support team will install all reactors.And AIXTRON G4 MOCVD systems will be used for the production of High Brightness LEDs.  ...
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2011-11-17

Hualei Optoelectronics Orders Eight New AIXTRON MOCVD Reactors

Xiang Nang Hualei Optoelectronics Ltd, of Hunan Province, China, has placed an order of eight new AIXTRON MOCVD reactors including six CRIUS II reactors in a 55x2-inch wafer configuration and two AIX G5 HT 56x2-inch wafer configuration systems to boost capacity for GaN HB LEDs. The order includes six CRIUS II reactors in a 55x2-inch wafer configuration and two AIX G5 HT 56x2-inch wafer configuration systems.   A local AIXTRON service team has installed and commissioned the new systems in Hualei Optoelectronics´ stat...
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2011-11-01

Infineon Technologies Utlizes AIXTRON G5 reactor for Power HEMT GaN-on-Si Development

Recently, AIXTRON has supplied its new AIXTRON AIX G5 HT MOCVD reactor to Infineon Technologies for the development of GaN-on-Si power HEMTs. In September 2011, Infineon Technologies confirmed process acceptance of the system in a 8x6-inch wafer configuration with the option to upgrade to 5x8-inch. Dr. Franz Auerbach, Senior Director R&D for Power Management & Supply Discretes at Infineon Technologies,said that “We look forward to further enhance our plans in the field of GaN on Silicon. Our teams are confident that...
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2011-08-31

Forepi to Boost HB Blue LED Capacity with Aixtron

Aixtron SE has a new multiple tool order for 55x2-inch CRIUS II systems from existing customer Forepi. The new systems will be dedicated to the volume production of materials for high brightness blue LEDs. The system order came in the first quarter of 2011 and delivery takes place in the period between the second and fourth quarters of 2011. One of Aixtron´s local support teams will install and commission the new reactors in the company’s state-of-the-art production complex in Taiwan. Forepi President, Fen Ren Chien, comments, “Our technica...
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2011-07-04

Aixtron Sets up Shanghai Subsidiary in China

Currently, Aixtron is building a wholly owned Chinese subsidiary Aixtron China Ltd.in Shanghai for its further expansion in China. This move targets to support Aixtron’s growing base of Chinese customers and makes it easier to grow by opening other facilities throughout China in the near future. Christian Geng, Aixtron Vice President Greater China,ponited out that  ,"This is the next logical step in terms of our increasing commitment to support China’s aggressive plans to become one of the world’s leading countries in LED production. ...
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2011-06-22

Aixtron Received New Order from AquaLite

AquaLite in China has placed a new order from Aixtron for 55x2-inch CRIUS II reactor which will be dedicated to the growth of materials for high brightness LEDs and high Voltage (HV) LED production. The system was ordered in the first quarter of 2011 and the local Aixtron support team will install and commission the new reactor in the second quarter of 2011 at the dedicated AquaLite power chip LED facility within its mainland China production plant. it’s said that with state of the art epitaxial crystal growth and chip process technology, AquaLite&rs...
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2011-06-09

AIXTRON CCS System Selects for GaN-based Blue LED

AIXTRON is selected for GaN-based blue LED by Taiyuan University of Technology, China. The order is for one AIXTRON Close Coupled Showerhead (CCS) 3x2-inch configuration deposition system. The system will be delivered in the second quarter of 2011. One of AIXTRON´s local support teams in China will commission the new reactor in a new state of the art facility at the University. According to Dr. Jian Liang, Professor of Taiyuan University of Technology’s Material College State Laboratory, this will be their first AIXTR...
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2011-05-20

AIXTRON Received Samsung’s G5 HT MOCVD Planetary Reactor Orders

Recently, AIXTRON has received a large multiple order of its G5 HT MOCVD Planetary Reactor for the industry standard LED production platform from Samsung LED. The new systems will be installed within this year at Samsung’s latest state-of-the-art production facility and be used for volume production of HB blue and white GaN-based LEDs for television back-light units and LED lamps for solid-state lighting applications. Samsung LED has been using AIX 2800G4 HT GaN MOCVD systems for several years. Following successful commission...
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